Si4559ADY-T1-E3
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Main description | Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R |
Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 14
- Inventory 8
- PCNs 32
- GIDEP-Alerts 2
- MaskPart Si4559ADY%E3
- IntroductionDate Jan 16, 2006
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N|P
- Configuration Dual Dual Drain
- Material N/A
- Maximum Continuous Drain Current (A) 4.3@N Channel|3@P Channel
- Maximum Drain Source Resistance (mOhm) 58@10V
- Maximum Drain Source Voltage (V) 60
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 2000
- Number of Elements per Chip 2
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 10@N Channel|30@P Channel
- Typical Gate Charge @ 10V (nC) 13@N Channel|14.5@P Channel
- Typical Gate Charge @ Vgs (nC) 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel
- Typical Input Capacitance @ Vds (pF) 665@15V@N Channel|650@15V@P Channel
- Typical Rise Time (ns) 65|15@N Channel|70|13@P Channel
- Typical Turn-Off Delay Time (ns) 15|20@N Channel|40|35@P Channel
- Typical Turn-On Delay Time (ns) 15|10@N Channel|30|10@P Channel