Si4410BDY-T1-E3
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R |
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 530
- Inventory 1
- PCNs 30
- GIDEP-Alerts 2
- MaskPart Si4410BDY%E3
- IntroductionDate May 13, 2003
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 7.5
- Maximum Drain Source Resistance (mOhm) 13.5@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 15
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 13@5V
- Typical Input Capacitance @ Vds (pF) N/A
- Typical Rise Time (ns) 10
- Typical Turn-Off Delay Time (ns) 40
- Typical Turn-On Delay Time (ns) 10