PHB24N03LT
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 30V 24A 3-Pin(2+Tab) D2PAK |
Trans MOSFET N-CH 30V 24A 3-Pin(2+Tab) D2PAK
Informacje podstawowe
- ProducentNXP Semiconductors
- Automotive No
Informacje dodatkowe
- Crosses 10
- PCNs 13
- MaskPart PHB24N03LT%
- IntroductionDate Jan 01, 1998
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 24
- Maximum Drain Source Resistance (mOhm) 50@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 1000
- Maximum Gate Source Voltage (V) ±13
- Maximum Gate Threshold Voltage (V) 2
- Maximum IDSS (uA) 10
- Maximum Power Dissipation (mW) 60000
- Maximum Storage Temperature (°C) 175
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TMOS
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 36
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 9@5V
- Typical Input Capacitance @ Vds (pF) 460@25V
- Typical Rise Time (ns) 50
- Typical Turn-Off Delay Time (ns) 30
- Typical Turn-On Delay Time (ns) 12