MRF6414

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Main description Trans RF BJT NPN 28V 6A 6-Pin Case 333A-02
Trans RF BJT NPN 28V 6A 6-Pin Case 333A-02

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • PCNs 14
  • MaskPart MRF6414%
  • IntroductionDate Jul 16, 2002

Parametry

  • Configuration Single Quad Emitter
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 65
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 28
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) 6
  • Maximum DC Collector Current Range (A) 2 to 8
  • Maximum Emitter Base Voltage (V) 4
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power Dissipation (mW) 134000
  • Maximum Transition Frequency (MHz) N/A
  • Minimum DC Current Gain 30@1A@5V
  • Minimum DC Current Gain Range 30 to 50
  • Minimum Operating Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Output Power (W) 50
  • Supplier Temperature Grade N/A
  • Type NPN
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