MRF586
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 17V 0.2A 2500mW 3-Pin TO-39 |
Trans RF BJT NPN 17V 0.2A 2500mW 3-Pin TO-39
Informacje podstawowe
- ProducentASI Semiconductor, Inc
- EURoHSYes (2011/65/EU)
Informacje dodatkowe
- Inventory 1
- MaskPart MRF586%
- IntroductionDate Jul 01, 1999
Parametry
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 34
- Maximum Collector Cut-Off Current (nA) 50000
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 17
- Maximum Collector-Emitter Voltage Range (V) <20
- Maximum DC Collector Current (A) 0.2
- Maximum DC Collector Current Range (A) 0.12 to 0.5
- Maximum Emitter Base Voltage (V) 2.5
- Maximum Emitter Cut-Off Current (nA) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance 70°C/W
- Maximum Noise Figure (dB) 3(Typ)
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 2500
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 200
- Maximum Transition Frequency (MHz) 4500(Typ)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 50@50mA@5V
- Minimum DC Current Gain Range 50 to 120
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions 15V/90mA
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) 2.2(Max)
- Typical Power Gain (dB) 14.5