K9F2G08U0A-PIB0

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Main description SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I

Informacje podstawowe

  • ProducentSamsung Electronics
  • EURoHSYes (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 52
  • PCNs 9
  • MaskPart K9F2G08U0APIB0%
  • IntroductionDate May 22, 2001
  • SupplierUrl http://www.samsung.com/global/business/semiconductor/partnumberSearch.do?webpartnum=K9F2G08U0A-PIB0&cdnpartnum=&ppmi=PartnoSearch

Parametry

  • Address Bus Width (bit) 29
  • Architecture Sectored
  • Bank Size N/R
  • Block Organization Symmetrical
  • Boot Block No
  • Cell Type SLC NAND
  • Command Compatible No
  • Density (bit) 2G
  • Density in Bits (bit) 2147483648
  • ECC Support Yes
  • Erase Suspend/Resume Modes Support No
  • Interface Type Parallel
  • Location of Boot Block N/R
  • Maximum Access Time (ns) N/A
  • Maximum Erase Time (s) 0.002/Block
  • Maximum Operating Current (mA) N/A
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Page Access Time (ns) 25(Min)
  • Maximum Programming Time (ms) 0.7/Page
  • Minimum Operating Supply Voltage (V) 2.7
  • Minimum Operating Temperature (°C) -40
  • Number of Banks N/A
  • Number of Bits per Word (bit) 8
  • Number of Words 256M
  • OE Access Time (ns) N/A
  • Page Read Current (mA) 30
  • Page Size 2Kbyte
  • Program Current (mA) 30
  • Programmability Yes
  • Programming Voltage (V) N/A
  • Sector Size 128Kbyte x 2048
  • Simultaneous Read/Write Support No
  • Supplier Temperature Grade Industrial
  • Support of Common Flash Interface No
  • Support of Page Mode Yes
  • Timing Type Asynchronous
  • Typical Operating Supply Voltage (V) 3.3
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