IRFP3710PBF

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Main description	Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-247AC Tube

PARAMETRY PRODUKTU

Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-247AC Tube

Informacje podstawowe

ProducentInfineon Technologies AG
EURoHSYes (2011/65/EU, 2015/863)
Automotive No

Informacje dodatkowe

Crosses 59
Inventory 10
PCNs 59
MaskPart IRFP3710PBF%
IntroductionDate Feb 26, 2004
EnablingEnergyEfficiency No
AliasParts SP001552026
SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFP3710PBF

Parametry

Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Material N/A
Maximum Continuous Drain Current (A) 57
Maximum Continuous Drain Current @ Temperature (A) 40@Tc=100C
Maximum Continuous Drain Current on PCB @ TC=25°C (A) N/A
Maximum Diode Forward Voltage (V) 1.3
Maximum Drain Source Resistance (mOhm) 25@10V
Maximum Drain Source Resistance @ Vgs (mOhm) 25@10V
Maximum Drain Source Voltage (V) 100
Maximum Gate Resistance (Ohm) N/A
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum IDSS (uA) 25
Maximum Junction Ambient Thermal Resistance 62°C/W
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) N/A
Maximum Junction Case Thermal Resistance 0.75°C/W
Maximum Offset Voltage (mV) N/A
Maximum Operating Temperature (°C) 175
Maximum Positive Gate Source Voltage (V) 20
Maximum Power Dissipation (mW) 200000
Maximum Power Dissipation on PCB @ TC=25°C (W) N/A
Maximum Pulsed Drain Current @ TC=25°C (A) 180
Maximum Storage Temperature (°C) 175
Minimum Gate Resistance (Ohm) N/A
Minimum Gate Threshold Voltage (V) 2
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Operating Junction Temperature (°C) -55 to 175
Process Technology HEXFET
Supplier Temperature Grade N/A
Tradename HEXFET®
Typical Diode Forward Voltage (V) N/A
Typical Drain Source Resistance @ 125°C (mOhm) N/A
Typical Drain Source Resistance @ 25°C (mOhm) N/A
Typical Fall Time (ns) 48
Typical Forward Transconductance (S) 20(Min)
Typical Gate Charge @ 10V (nC) 190(Max)
Typical Gate Charge @ Vgs (nC) 190(Max)@10V
Typical Gate Plateau Voltage (V) 5
Typical Gate Resistance (Ohm) N/A
Typical Gate Threshold Voltage (V) N/A
Typical Gate to Drain Charge (nC) 82(Max)
Typical Gate to Source Charge (nC) 26(Max)
Typical Input Capacitance @ Vds (pF) 3000@25V
Typical Output Capacitance (pF) 640
Typical Reverse Recovery Charge (nC) 1700
Typical Reverse Recovery Time (ns) 210
Typical Reverse Transfer Capacitance @ Vds (pF) 330@25V
Typical Rise Time (ns) 59
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 58
Typical Turn-On Delay Time (ns) 14