IRF7907TRPBF

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Main description	Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

PARAMETRY PRODUKTU

Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

Informacje podstawowe

ProducentInfineon Technologies AG
EURoHSYes (2011/65/EU)
Automotive No

Informacje dodatkowe

Crosses 48
Inventory 8
PCNs 34
MaskPart IRF7907%PBF
IntroductionDate Jan 04, 2006
EnablingEnergyEfficiency No
SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7907TRPBF

Parametry

Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Dual Dual Drain
Material N/A
Maximum Continuous Drain Current (A) 9.1@Q 1|11@Q 2
Maximum Continuous Drain Current @ Temperature (A) 7.3@Ta=70C@Q 1|8.8@Ta=70C@Q 2
Maximum Drain Source Resistance (mOhm) 16.4@10V@Q 1|11.8@10V@Q 2
Maximum Drain Source Resistance @ Vgs (mOhm) 16.4@10V|20.5@4.5V@Q 1|11.8@10V|13.7@4.5V@Q 2
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2.35
Maximum Junction Ambient Thermal Resistance 62.5°C/W
Maximum Junction Case Thermal Resistance N/A
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 2000
Minimum Operating Temperature (°C) -55
Number of Elements per Chip 2
Process Technology HEXFET
Supplier Temperature Grade N/A
Typical Drain Source Resistance @ 125°C (mOhm) 26@4V|21.5@6V|20@8V|19.5@10V@Q 1|16@4V|14.5@6V|13.5@8V|13@10V@Q 2
Typical Drain Source Resistance @ 25°C (mOhm) 13.7@10V|17.1@4.5V@Q 1|9.8@10V|11.5@4.5V@Q 2
Typical Fall Time (ns) 3.4@Q 1|5.3@Q 2
Typical Forward Transconductance (S) 19(Min)@Q 1|24(Min)@Q 2
Typical Gate Charge @ 10V (nC) N/A
Typical Gate Charge @ Vgs (nC) 6.7@4.5V@Q 1|14@4.5V@Q 2
Typical Gate Resistance (Ohm) N/A
Typical Gate to Drain Charge (nC) 2.5@Q 1|4.9@Q 2
Typical Gate to Source Charge (nC) 1.3@Q 1|3@Q 2
Typical Input Capacitance @ Vds (pF) 850@15V@Q 1|1790@15V@Q 2
Typical Reverse Recovery Charge (nC) 4.1@Q 1|5.9@Q 2
Typical Rise Time (ns) 9.3@Q 1|14@Q 2
Typical Switch Charge (nC) 3.2@Q 1|6.2@Q 2
Typical Turn-Off Delay Time (ns) 8@Q 1|13@Q 2
Typical Turn-On Delay Time (ns) 6@Q 1|8@Q 2