IRF7425TRPbF-1
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 20V 15A 8-Pin SOIC T/R |
Trans MOSFET P-CH 20V 15A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 59
- PCNs 12
- MaskPart IRF7425%PbF1
- IntroductionDate Nov 20, 2013
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7425TRPbF-1
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 15
- Maximum Drain Source Resistance (mOhm) 8.2@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±12
- Maximum Gate Threshold Voltage (V) 1.2
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 160
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 87@4.5V
- Typical Input Capacitance @ Vds (pF) 7980@15V
- Typical Rise Time (ns) 20
- Typical Turn-Off Delay Time (ns) 230
- Typical Turn-On Delay Time (ns) 13