IRF7240TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH Si 40V 10.5A 8-Pin SOIC T/R |
Trans MOSFET P-CH Si 40V 10.5A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 33
- Inventory 8
- PCNs 81
- MaskPart IRF7240%PBF
- IntroductionDate Jun 06, 2005
- EnablingEnergyEfficiency No
- AliasParts SP001564738
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7240TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material Si
- Maximum Continuous Drain Current (A) 10.5
- Maximum Continuous Drain Current @ Temperature (A) 8.6@Ta=70C
- Maximum Drain Source Resistance (mOhm) 15@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 15@10V|25@4.5V
- Maximum Drain Source Voltage (V) 40
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 3
- Maximum Junction Ambient Thermal Resistance 50°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) 20@4V|12.6@8V|11@12V
- Typical Fall Time (ns) 97
- Typical Forward Transconductance (S) 17(Min)
- Typical Gate Charge @ 10V (nC) 73
- Typical Gate Charge @ Vgs (nC) 73@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 17
- Typical Gate to Source Charge (nC) 31
- Typical Input Capacitance @ Vds (pF) 9250@25V
- Typical Output Capacitance (pF) 580
- Typical Reverse Recovery Charge (nC) 75
- Typical Rise Time (ns) 490
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 210
- Typical Turn-On Delay Time (ns) 52