BC858C/E8

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Main description	Trans GP BJT PNP 30V 0.2A 310mW 3-Pin SOT-23 T/R

Trans GP BJT PNP 30V 0.2A 310mW 3-Pin SOT-23 T/R

Informacje podstawowe

Category Bipolar Small Signal
Configuration Single
Material Si
Maximum 3rd Order Intercept Point (dBm) N/R
Maximum Base Emitter Saturation Voltage (V) 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector Base Voltage (V) 30
Maximum Collector Cut-Off Current (nA) 15000
Maximum Collector-Emitter Saturation Voltage (V) 0.3@0.5mA@10mA|0.65@5mA@100mA
Maximum Collector-Emitter Voltage (V) 30
Maximum DC Collector Current (A) 0.2
Maximum Delay Time (ns) N/A
Maximum Emitter Base Voltage (V) 5
Maximum Emitter Cut-Off Current (nA) N/A
Maximum Fall Time (ns) N/A
Maximum Junction Ambient Thermal Resistance 320°C/W
Maximum Junction Case Thermal Resistance N/A
Maximum Noise Figure (dB) 10
Maximum Operating Temperature (°C) 150
Maximum Power 1dB Compression (dBm) N/R
Maximum Power Dissipation (mW) 310
Maximum Rise Time (ns) N/A
Maximum Storage Temperature (°C) 150
Maximum Storage Time (ns) N/A
Maximum Transition Frequency (MHz) 150(Min)
Maximum Turn-Off Time (ns) N/A
Maximum Turn-On Time (ns) N/A
Minimum DC Current Gain 420@2mA@5V
Minimum Operating Temperature (°C) -65
Minimum Storage Temperature (°C) -65
Number of Elements per Chip 1
Operational Bias Conditions N/R
Output Power (W) N/R
Supplier Temperature Grade N/A
Type PNP
Typical Input Capacitance (pF) N/A
Typical Output Capacitance (pF) 6(Max)
Typical Power Gain (dB) N/R