AS4C1M16S-6TE
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Main description | DRAM Chip SDRAM 16Mbit 1Mx16 3.3V |
DRAM Chip SDRAM 16Mbit 1Mx16 3.3V
Informacje podstawowe
- ProducentAlliance Memory
- EURoHSNo (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- MaskPart AS4C1M16S6TE%
- IntroductionDate Jan 20, 2008
Parametry
- Address Bus Width (bit) 12
- Data Bus Width (bit) 16
- Density (bit) 16M
- Density in Bits (bit) 16777216
- Interface Type LVTTL
- Maximum Access Time (ns) 5.5
- Maximum Clock Rate (MHz) 166
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -65
- Number of Bits per Word (bit) 16
- Number of I/O Lines (bit) 16
- Number of Internal Banks 2
- Number of Words per Bank 512K
- Organization 1Mx16
- Supplier Temperature Grade Extended
- Type SDRAM