AS4C1M16S-6TE

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Main description DRAM Chip SDRAM 16Mbit 1Mx16 3.3V
DRAM Chip SDRAM 16Mbit 1Mx16 3.3V

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • MaskPart AS4C1M16S6TE%
  • IntroductionDate Jan 20, 2008

Parametry

  • Address Bus Width (bit) 12
  • Data Bus Width (bit) 16
  • Density (bit) 16M
  • Density in Bits (bit) 16777216
  • Interface Type LVTTL
  • Maximum Access Time (ns) 5.5
  • Maximum Clock Rate (MHz) 166
  • Maximum Operating Current (mA) 170
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) -25
  • Minimum Storage Temperature (°C) -65
  • Number of Bits per Word (bit) 16
  • Number of I/O Lines (bit) 16
  • Number of Internal Banks 2
  • Number of Words per Bank 512K
  • Operating Supply Voltage (V) 3.3
  • Organization 1Mx16
  • Supplier Temperature Grade Extended
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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