TPS1110DR

ProducentTexas InstrumentsEURoHSUnknown (2002/95/EC)Automotive No.
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TPS1110DR_TEXAS_INSTRUMENTS
material
Si
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Opis / TPS1110DR

Trans MOSFET P-CH Si 7V 6A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentTexas Instruments
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 1
  • PCNs 41
  • MaskPart TPS1110D%
  • IntroductionDate Oct 01, 1994

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single Quad Drain Triple Source
  • Material Si
  • Maximum Continuous Drain Current (A) 6
  • Maximum Drain Source Resistance (mOhm) 75@4.5V
  • Maximum Drain Source Voltage (V) 7
  • Maximum Gate Source Voltage (V) ±7
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 1250
  • Minimum Operating Temperature (°C) -40
  • Number of Elements per Chip 1
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 4.5
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 4.3@6V
  • Typical Input Capacitance @ Vds (pF) 275@6V
  • Typical Rise Time (ns) 22
  • Typical Turn-Off Delay Time (ns) 22
  • Typical Turn-On Delay Time (ns) 5.8

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Main description Trans MOSFET P-CH Si 7V 6A 8-Pin SOIC T/R