TPS1101Y
ProducentTexas InstrumentsEURoHSNo (2011/65/EU, 2015/863)Automotive No.
- SKU
- TPS1101Y_TEXAS_INSTRUMENTS
- material
- Si
0,00 zł
Opis / TPS1101Y
Trans MOSFET P-CH Si 15V 2.3A
Informacje podstawowe
- ProducentTexas Instruments
- EURoHSNo (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- PCNs 39
- MaskPart TPS1101Y%
- IntroductionDate Dec 01, 1993
Parametry
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material Si
- Maximum Continuous Drain Current (A) 2.3
- Maximum Drain Source Resistance (mOhm) 90@10V
- Maximum Drain Source Voltage (V) 15
- Maximum Gate Source Voltage (V) 2
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
Więcej informacji
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH Si 15V 2.3A |