TPS1101PWLE

ProducentTexas InstrumentsEURoHSUnknown (2011/65/EU)Automotive No.
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SKU
TPS1101PWLE_TEXAS_INSTRUMENTS
material
Si
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Opis / TPS1101PWLE

Trans MOSFET P-CH Si 15V 2.18A 16-Pin TSSOP T/R

Informacje podstawowe

  • ProducentTexas Instruments
  • EURoHSUnknown (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 1
  • Inventory 4*
  • PCNs 39
  • MaskPart TPS1101PW%
  • IntroductionDate Dec 01, 1993

Parametry

  • Category Small Signal
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single Hex Drain Quint Source
  • Material Si
  • Maximum Continuous Drain Current (A) 2.18
  • Maximum Drain Source Resistance (mOhm) 190@4.5V
  • Maximum Drain Source Voltage (V) 15
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) 2
  • Maximum Gate Threshold Voltage (V) 1.5
  • Maximum IDSS (uA) 0.5
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) 710
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology N/A
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 13
  • Typical Gate Charge @ 10V (nC) 11.25
  • Typical Gate Charge @ Vgs (nC) 11.25@10V
  • Typical Input Capacitance @ Vds (pF) N/A
  • Typical Rise Time (ns) 5.5
  • Typical Turn-Off Delay Time (ns) 19
  • Typical Turn-On Delay Time (ns) 6.5

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Main description Trans MOSFET P-CH Si 15V 2.18A 16-Pin TSSOP T/R