TPS1101D

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Main description	Trans MOSFET P-CH Si 15V 2.3A 8-Pin SOIC Tube

Trans MOSFET P-CH Si 15V 2.3A 8-Pin SOIC Tube

Informacje podstawowe

Category Small Signal
Channel Mode Enhancement
Channel Type P
Configuration Single Quad Drain Triple Source
Material Si
Maximum Continuous Drain Current (A) 2.3
Maximum Continuous Drain Current @ Temperature (A) 0.39@Ta=125C|0.47@Ta=125C|0.71@Ta=125C|1.04@Ta=125C
Maximum Drain Source Resistance (mOhm) 90(Typ)@10V
Maximum Drain Source Resistance @ Vgs (mOhm) 190@4.5V|310@3V|400@2.7V
Maximum Drain Source Voltage (V) 15
Maximum Gate Source Voltage (V) 2
Maximum Gate Threshold Voltage (V) 1.5
Maximum Junction Ambient Thermal Resistance N/A
Maximum Junction Case Thermal Resistance N/A
Maximum Operating Temperature (°C) 125
Maximum Power Dissipation (mW) 791
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -40
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Supplier Temperature Grade N/A
Typical Drain Source Resistance @ 125°C (mOhm) N/A
Typical Drain Source Resistance @ 25°C (mOhm) 90@10V|134@4.5V|198@3V|232@2.7V
Typical Fall Time (ns) 13
Typical Forward Transconductance (S) 4.3
Typical Gate Charge @ 10V (nC) 11.25
Typical Gate Charge @ Vgs (nC) 11.25@10V
Typical Gate Resistance (Ohm) N/A
Typical Gate to Drain Charge (nC) 2.6
Typical Gate to Source Charge (nC) 1.5
Typical Input Capacitance @ Vds (pF) N/A
Typical Output Capacitance (pF) N/A
Typical Reverse Recovery Charge (nC) N/A
Typical Rise Time (ns) 5.5
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 19
Typical Turn-On Delay Time (ns) 6.5