TPS1100DR

Opis / TPS1100DR

Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC T/R

Informacje podstawowe

Category Small Signal
Channel Mode Enhancement
Channel Type P
Configuration Single Quad Drain Triple Source
Material Si
Maximum Continuous Drain Current (A) 1.6
Maximum Continuous Drain Current @ Temperature (A) 0.28@Ta=125C|0.33@Ta=125C|0.47@Ta=125C|0.72@Ta=125C
Maximum Drain Source Resistance (mOhm) 400@4.5V
Maximum Drain Source Resistance @ Vgs (mOhm) 400@4.5V|700@3V|850@2.7V
Maximum Drain Source Voltage (V) 15
Maximum Gate Source Voltage (V) 2
Maximum Gate Threshold Voltage (V) 1.5
Maximum Junction Ambient Thermal Resistance N/A
Maximum Junction Case Thermal Resistance N/A
Maximum Operating Temperature (°C) 125
Maximum Power Dissipation (mW) 791
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -40
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Supplier Temperature Grade N/A
Typical Drain Source Resistance @ 125°C (mOhm) N/A
Typical Drain Source Resistance @ 25°C (mOhm) 180@10V|291@4.5V|476@3V|606@2.7V
Typical Fall Time (ns) 2
Typical Forward Transconductance (S) 2.5
Typical Gate Charge @ 10V (nC) 5.45
Typical Gate Charge @ Vgs (nC) 5.45@10V
Typical Gate Resistance (Ohm) N/A
Typical Gate to Drain Charge (nC) 1.4
Typical Gate to Source Charge (nC) 0.87
Typical Input Capacitance @ Vds (pF) N/A
Typical Output Capacitance (pF) N/A
Typical Reverse Recovery Charge (nC) N/A
Typical Rise Time (ns) 10
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 13
Typical Turn-On Delay Time (ns) 4.5

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Main description	Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC T/R