SMBJ170A R5

ProducentTaiwan SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SMBJ170A_R5_TAIWAN_SEMICONDUCTOR
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Opis / SMBJ170A R5

Diode TVS Single Uni-Dir 170V 600W 2-Pin SMB T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 301
  • Inventory 8*
  • PCNs 6
  • MaskPart SMBJ170A%
  • IntroductionDate May 10, 2000

Parametry

  • Capacitance Value (pF) N/A
  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Breakdown Voltage (V) 209
  • Maximum Clamping Voltage (V) 275
  • Maximum Forward Voltage (V) 5
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 2.2
  • Maximum Reverse Leakage Current (uA) 1
  • Maximum Reverse Stand-Off Voltage (V) 170
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 189
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Forward Surge Current (A) 100
  • Peak Pulse Power Dissipation (W) 600
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1
  • Tradename N/A

Więcej informacji

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Main description Diode TVS Single Uni-Dir 170V 600W 2-Pin SMB T/R