SMBJ160AHM4G

ProducentTaiwan SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive Yes.
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SMBJ160AHM4G_TAIWAN_SEMICONDUCTOR
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Opis / SMBJ160AHM4G

Diode TVS Single Uni-Dir 160V 600W Automotive 2-Pin SMB T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive Yes

Informacje dodatkowe

  • Crosses 282
  • PCNs 4
  • MaskPart SMBJ160AH%G

Parametry

  • Capacitance Value (pF) N/A
  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Breakdown Voltage (V) 197
  • Maximum Clamping Voltage (V) 259
  • Maximum Forward Voltage (V) 5
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 2.4
  • Maximum Reverse Leakage Current (uA) 1
  • Maximum Reverse Stand-Off Voltage (V) 160
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 178
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Forward Surge Current (A) 100
  • Peak Pulse Power Dissipation (W) 600
  • Supplier Temperature Grade Automotive
  • Test Current (mA) 1
  • Tradename N/A

Więcej informacji

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Main description Diode TVS Single Uni-Dir 160V 600W Automotive 2-Pin SMB T/R