SMAJ51AHR2G

ProducentTaiwan SemiconductorEURoHSYes (2011/65/EU, 2015/863)Automotive Yes.
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SMAJ51AHR2G_TAIWAN_SEMICONDUCTOR
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Opis / SMAJ51AHR2G

Diode TVS Single Uni-Dir 51V 400W Automotive 2-Pin SMA T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive Yes

Informacje dodatkowe

  • Crosses 192
  • Inventory 1*
  • PCNs 3
  • MaskPart SMAJ51AH%G
  • IntroductionDate Feb 22, 2016

Parametry

  • Capacitance Value (pF) N/A
  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Breakdown Voltage (V) 62.7
  • Maximum Clamping Voltage (V) 82.4
  • Maximum Forward Voltage (V) 3.5
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 4.9
  • Maximum Reverse Leakage Current (uA) 1
  • Maximum Reverse Stand-Off Voltage (V) 51
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 56.7
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Forward Surge Current (A) 40
  • Peak Pulse Power Dissipation (W) 400
  • Supplier Temperature Grade Automotive
  • Test Current (mA) 1
  • Tradename N/A

Więcej informacji

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Main description Diode TVS Single Uni-Dir 51V 400W Automotive 2-Pin SMA T/R