SMAJ33A M2G

ProducentTaiwan SemiconductorEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SMAJ33A_M2G_TAIWAN_SEMICONDUCTOR
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Opis / SMAJ33A M2G

Diode TVS Single Uni-Dir 33V 400W 2-Pin SMA T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 326
  • Inventory 3*
  • PCNs 5
  • MaskPart SMAJ33A%G

Parametry

  • Capacitance Value (pF) N/A
  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Breakdown Voltage (V) 40.6
  • Maximum Clamping Voltage (V) 53.3
  • Maximum Forward Voltage (V) 3.5
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 7.5
  • Maximum Reverse Leakage Current (uA) 1
  • Maximum Reverse Stand-Off Voltage (V) 33
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 36.7
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Forward Surge Current (A) 40
  • Peak Pulse Power Dissipation (W) 400
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1
  • Tradename N/A

Więcej informacji

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Main description Diode TVS Single Uni-Dir 33V 400W 2-Pin SMA T/R