SI7463DP-T1-GE3

ProducentVishayEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SI7463DP-T1-GE3_VISHAY
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Opis / SI7463DP-T1-GE3

Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R

Informacje podstawowe

  • ProducentVishay
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 18
  • Inventory 6
  • PCNs 25
  • GIDEP-Alerts 1
  • MaskPart SI7463DP%GE3
  • IntroductionDate Oct 09, 2003

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single Quad Drain Triple Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 11
  • Maximum Drain Source Resistance (mOhm) 9.2@10V
  • Maximum Drain Source Voltage (V) 40
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 5400
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology TrenchFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 100
  • Typical Gate Charge @ 10V (nC) 121
  • Typical Gate Charge @ Vgs (nC) 121@10V
  • Typical Input Capacitance @ Vds (pF) N/A
  • Typical Rise Time (ns) 25
  • Typical Turn-Off Delay Time (ns) 200
  • Typical Turn-On Delay Time (ns) 20

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Main description Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R