SI4435DDY-T1-GE3

Opis / SI4435DDY-T1-GE3

Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Informacje podstawowe

Category Power MOSFET
Channel Mode Enhancement
Channel Type P
Configuration Single Quad Drain Triple Source
Material N/A
Maximum Continuous Drain Current (A) 8.1
Maximum Continuous Drain Current @ Temperature (A) 9.1@Tc=70C|6.5@Ta=70C
Maximum Drain Source Resistance (mOhm) 24@10V
Maximum Drain Source Resistance @ Vgs (mOhm) 24@10V|35@4.5V
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum Junction Ambient Thermal Resistance N/A
Maximum Junction Case Thermal Resistance N/A
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 2500
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Process Technology TrenchFET
Supplier Temperature Grade N/A
Typical Drain Source Resistance @ 125°C (mOhm) 45@4V|37@5V|33@6V|30@7V|29@8V|28@9V|27@10V
Typical Drain Source Resistance @ 25°C (mOhm) 19.5@10V|28@4.5V
Typical Fall Time (ns) 12|16
Typical Forward Transconductance (S) 23
Typical Gate Charge @ 10V (nC) 32
Typical Gate Charge @ Vgs (nC) 32@10V|15@4.5V
Typical Gate Resistance (Ohm) 5.8
Typical Gate to Drain Charge (nC) 7.5
Typical Gate to Source Charge (nC) 4
Typical Input Capacitance @ Vds (pF) 1350@15V
Typical Reverse Recovery Charge (nC) 22
Typical Rise Time (ns) 8|35
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 40|45
Typical Turn-On Delay Time (ns) 10|42

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Main description	Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R