S34ML01G100BHI000

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Main description SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 20ns 63-Pin BGA Tray
SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 20ns 63-Pin BGA Tray

Informacje podstawowe

  • ProducentCypress Semiconductor
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 341
  • Inventory 4
  • PCNs 26
  • MaskPart S34ML01G100BHI00%
  • IntroductionDate Aug 02, 2012
  • SupplierUrl http://www.cypress.com/?app=search&searchType=part&keywords=S34ML01G100BHI000

Parametry

  • Address Bus Width (bit) 28
  • Architecture Sectored
  • Bank Size N/R
  • Block Organization Symmetrical
  • Boot Block No
  • Cell Type SLC NAND
  • Command Compatible No
  • Density (bit) 1G
  • Density in Bits (bit) 1073741824
  • ECC Support Yes
  • Erase Suspend/Resume Modes Support No
  • Interface Type Parallel
  • Location of Boot Block N/R
  • MMC Version N/A
  • Maximum Access Time (ns) 20
  • Maximum Erase Time (s) 0.003/Block
  • Maximum Operating Current (mA) 30
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Page Access Time (ns) N/R
  • Maximum Programming Time (ms) 0.7
  • Maximum Storage Temperature (°C) 150
  • Minimum Endurance (Cycles) 100000(Typ)
  • Minimum Operating Supply Voltage (V) 2.7
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -65
  • Number of Banks N/A
  • Number of Bits per Word (bit) 8
  • Number of Words 128M
  • OE Access Time (ns) N/A
  • Page Read Current (mA) N/R
  • Page Size 2Kbyte
  • Program Current (mA) 30
  • Programmability Yes
  • Programming Voltage (V) N/A
  • Sector Size 128Kbyte x 1024
  • Simultaneous Read/Write Support No
  • Supplier Temperature Grade Industrial
  • Support of Common Flash Interface No
  • Support of Page Mode No
  • Timing Type Asynchronous
  • Typical Operating Supply Voltage (V) 3|3.3
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