PHB24N03T

ProducentNXP SemiconductorsAutomotive No.
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PHB24N03T_NXP_SEMICONDUCTORS
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Opis / PHB24N03T

Trans MOSFET N-CH 30V 24A 3-Pin(2+Tab) D2PAK

Informacje podstawowe

  • ProducentNXP Semiconductors
  • Automotive No

Informacje dodatkowe

  • Crosses 11
  • PCNs 13
  • MaskPart PHB24N03T%
  • IntroductionDate Sep 01, 1997

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 24
  • Maximum Drain Source Resistance (mOhm) 56@10V
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Source Leakage Current (nA) 1000
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum IDSS (uA) 10
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 60000
  • Maximum Storage Temperature (°C) 175
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology TMOS
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 20
  • Typical Gate Charge @ 10V (nC) 13
  • Typical Gate Charge @ Vgs (nC) 13@10V
  • Typical Input Capacitance @ Vds (pF) 385@25V
  • Typical Rise Time (ns) 40
  • Typical Turn-Off Delay Time (ns) 15
  • Typical Turn-On Delay Time (ns) 9

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Main description Trans MOSFET N-CH 30V 24A 3-Pin(2+Tab) D2PAK