PHB14NQ20T/T3

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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PHB14NQ20T_T3_NXP_SEMICONDUCTORS
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Opis / PHB14NQ20T/T3

Trans MOSFET N-CH 200V 14A 3-Pin(2+Tab) D2PAK T/R

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 100
  • PCNs 13
  • MaskPart PHB14NQ20T%
  • IntroductionDate Oct 01, 1999

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 14
  • Maximum Drain Source Resistance (mOhm) 230@10V
  • Maximum Drain Source Voltage (V) 200
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 125000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology TrenchFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 31
  • Typical Gate Charge @ 10V (nC) 38
  • Typical Gate Charge @ Vgs (nC) 38@10V
  • Typical Input Capacitance @ Vds (pF) 1500@25V
  • Typical Rise Time (ns) 40
  • Typical Turn-Off Delay Time (ns) 83
  • Typical Turn-On Delay Time (ns) 25

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Main description Trans MOSFET N-CH 200V 14A 3-Pin(2+Tab) D2PAK T/R