PHB11N50E

ProducentNXP SemiconductorsAutomotive No.
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PHB11N50E_NXP_SEMICONDUCTORS
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N/A
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Opis / PHB11N50E

Trans MOSFET N-CH 500V 10.9A 3-Pin(2+Tab) D2PAK

Informacje podstawowe

  • ProducentNXP Semiconductors
  • Automotive No

Informacje dodatkowe

  • Crosses 213
  • PCNs 12
  • MaskPart PHB11N50E%
  • IntroductionDate Jan 01, 1998

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 10.9
  • Maximum Drain Source Resistance (mOhm) 550@10V
  • Maximum Drain Source Voltage (V) 500
  • Maximum Gate Source Leakage Current (nA) 200
  • Maximum Gate Source Voltage (V) ±30
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum IDSS (uA) 25
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 156000
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology N/A
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 40
  • Typical Gate Charge @ 10V (nC) 75
  • Typical Gate Charge @ Vgs (nC) 75@10V
  • Typical Input Capacitance @ Vds (pF) 1326@25V
  • Typical Rise Time (ns) 38
  • Typical Turn-Off Delay Time (ns) 92
  • Typical Turn-On Delay Time (ns) 11

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Main description Trans MOSFET N-CH 500V 10.9A 3-Pin(2+Tab) D2PAK