P6SMB7.5A

ProducentTaiwan SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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P6SMB7.5A_TAIWAN_SEMICONDUCTOR
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Opis / P6SMB7.5A

Diode TVS Single Uni-Dir 6.4V 600W 2-Pin SMB T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 395
  • PCNs 2
  • MaskPart P6SMB7.5A%
  • IntroductionDate May 22, 2002

Parametry

  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Clamping Voltage (V) 11.3
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 55
  • Maximum Reverse Leakage Current (uA) 500
  • Maximum Reverse Stand-Off Voltage (V) 6.4
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 7.13
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -65 to 150
  • Peak Pulse Power Dissipation (W) 600
  • Supplier Temperature Grade N/A
  • Test Current (mA) 10

Więcej informacji

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Main description Diode TVS Single Uni-Dir 6.4V 600W 2-Pin SMB T/R