MRF957

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF957_NXP_SEMICONDUCTORS
material
Si
0,00 zł

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Opis / MRF957

Trans RF BJT NPN 10V 0.1A 227mW 3-Pin Case 419-02

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 1
  • PCNs 13
  • MaskPart MRF957%
  • IntroductionDate Jul 14, 1999

Parametry

  • Configuration Single
  • Material Si
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 20
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 10
  • Maximum Collector-Emitter Voltage Range (V)
  • Maximum DC Collector Current (A) 0.1
  • Maximum DC Collector Current Range (A) 0.06 to 0.12
  • Maximum Emitter Base Voltage (V) 15
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 227
  • Maximum Transition Frequency (MHz) 9000(Typ)
  • Minimum DC Current Gain 50@5mA@6V
  • Minimum DC Current Gain Range 50 to 120
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN

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Main description Trans RF BJT NPN 10V 0.1A 227mW 3-Pin Case 419-02