MRF9511LT1

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
Powiadom mnie gdy produkt będzie dostępny
SKU
MRF9511LT1_NXP_SEMICONDUCTORS
material
Si
0,00 zł

Zapytaj o ten produkt

Opis / MRF9511LT1

Trans RF BJT NPN 10V 0.1A 322mW 4-Pin SOT-143 T/R

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 6
  • PCNs 13
  • MaskPart MRF9511L%
  • IntroductionDate Mar 18, 1998

Parametry

  • Configuration Single Dual Emitter
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 20
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 10
  • Maximum Collector-Emitter Voltage Range (V)
  • Maximum DC Collector Current (A) 0.1
  • Maximum DC Collector Current Range (A) 0.06 to 0.12
  • Maximum Emitter Base Voltage (V) 1.5
  • Maximum Noise Figure (dB) 2.1(Min)
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 322
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) 8000(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 50@5mA@6V
  • Minimum DC Current Gain Range 50 to 120
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operational Bias Conditions 8V/30mA
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Power Gain (dB) N/A

Więcej informacji

Do pobrania Download
Main description Trans RF BJT NPN 10V 0.1A 322mW 4-Pin SOT-143 T/R