MRF947BT1
ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
- SKU
- MRF947BT1_NXP_SEMICONDUCTORS
- material
- Si
0,00 zł
Opis / MRF947BT1
Trans RF BJT NPN 10V 0.05A 3-Pin Case 419-02 T/R
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 154
- PCNs 14
- MaskPart MRF947B%
- IntroductionDate Oct 18, 1993
Parametry
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 20
- Maximum Collector Cut-Off Current (nA) 100
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 10
- Maximum Collector-Emitter Voltage Range (V)
- Maximum DC Collector Current (A) 0.05
- Maximum DC Collector Current Range (A) 0.001 to 0.06
- Maximum Emitter Base Voltage (V) 1.5
- Maximum Emitter Cut-Off Current (nA) 100
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance 400°C/W
- Maximum Noise Figure (dB) 2.8
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 188
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) 8000(Typ)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 50@500uA@1V|100@5mA@6V
- Minimum DC Current Gain Range 50 to 120
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Operational Bias Conditions 6V/15mA
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) 0.35
- Typical Power Gain (dB) 14.8
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| Main description | Trans RF BJT NPN 10V 0.05A 3-Pin Case 419-02 T/R |