MRF9411BLT1
ProducentON SemiconductorEURoHSNo (2011/65/EU, 2015/863)Automotive No.
- SKU
- MRF9411BLT1_ON_SEMICONDUCTOR
- material
- Si
0,00 zł
Opis / MRF9411BLT1
Trans RF BJT NPN 10V 0.05A 250mW 4-Pin SOT-143 T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSNo (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- PCNs 17
- MaskPart MRF9411BL%
- IntroductionDate Aug 24, 1999
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MRF9411BLT1&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Configuration Single
- Material Si
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 20
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 10
- Maximum Collector-Emitter Voltage Range (V)
- Maximum DC Collector Current (A) 0.05
- Maximum DC Collector Current Range (A) 0.001 to 0.06
- Maximum Emitter Base Voltage (V) 1.5
- Maximum Power Dissipation (mW) 250
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) 8000(Typ)
- Minimum DC Current Gain 100@5mA@6V
- Minimum DC Current Gain Range 50 to 120
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Type NPN
Więcej informacji
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 10V 0.05A 250mW 4-Pin SOT-143 T/R |