MRF8S21100HR3
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|---|---|
| Main description | Trans RF MOSFET N-CH 65V 3-Pin Case 465-06 T/R |
Trans RF MOSFET N-CH 65V 3-Pin Case 465-06 T/R
Informacje podstawowe
- ProducentNXP Semiconductors
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 6
- Inventory 2*
- PCNs 16
- MaskPart MRF8S21100H%
- IntroductionDate Oct 22, 2010
Parametry
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) N/A
- Maximum Drain Source Resistance (mOhm) N/A
- Maximum Drain Source Voltage (V) 65
- Maximum Frequency (MHz) 2170
- Maximum Gate Source Voltage (V) 10
- Maximum Noise Figure (dB) N/A
- Maximum Power Dissipation (mW) N/A
- Maximum Storage Temperature (°C) 150
- Maximum VSWR 10
- Minimum Frequency (MHz) 2110
- Minimum Storage Temperature (°C) -65
- Mode of Operation 1-Carrier W-CDMA
- Number of Elements per Chip 1
- Output Power (W) 24
- Supplier Temperature Grade N/A
- Types of Output Stages Single Ended
- Typical Drain Efficiency (%) 33.4
- Typical Fall Time (ns) N/A
- Typical Forward Transconductance (S) N/A
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) N/A
- Typical Input Capacitance @ Vds (pF) N/A
- Typical Output Capacitance @ Vds (pF) N/A
- Typical Power Gain (dB) 18.3
- Typical Power Gain @ Vds (dB) 18.3
- Typical Reverse Transfer Capacitance @ Vds (pF) N/A
- Typical Rise Time (ns) N/A
- Typical Turn-Off Delay Time (ns) N/A
- Typical Turn-On Delay Time (ns) N/A