MRF842

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF842_NXP_SEMICONDUCTORS
material
N/A
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Opis / MRF842

Trans RF BJT NPN

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • PCNs 13
  • MaskPart MRF842%
  • IntroductionDate Jan 01, 1992

Parametry

  • Configuration N/A
  • Material N/A
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) N/A
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) N/A
  • Maximum Collector-Emitter Voltage Range (V) N/A
  • Maximum DC Collector Current (A) N/A
  • Maximum DC Collector Current Range (A) N/A
  • Maximum Emitter Base Voltage (V) N/A
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) N/A
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) N/A
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain N/A
  • Minimum DC Current Gain Range N/A
  • Minimum Operating Temperature (°C) N/A
  • Minimum Storage Temperature (°C) N/A
  • Number of Elements per Chip N/A
  • Operational Bias Conditions N/A
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Collector Efficiency (%) N/A
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) N/A
  • Typical Power Gain (dB) N/A

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Main description Trans RF BJT NPN