MRF6409

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF6409_NXP_SEMICONDUCTORS
material
Si
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Opis / MRF6409

Trans RF BJT NPN 24V 5A 6-Pin Case 319-07

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 1
  • PCNs 14
  • MaskPart MRF6409%
  • IntroductionDate Jul 01, 2004

Parametry

  • Configuration Single Quad Emitter
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) N/A
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 24
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) 5
  • Maximum DC Collector Current Range (A) 2 to 8
  • Maximum Emitter Base Voltage (V) 4
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance 3.8°C/W
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 200
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 45000
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 20@1A@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions 26V/50mA
  • Output Power (W) 20
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) 18
  • Typical Power Gain (dB) 11

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Main description Trans RF BJT NPN 24V 5A 6-Pin Case 319-07