MRF5812GR1
ProducentMicrosemiEURoHSYes (2011/65/EU)Automotive No.
- SKU
- MRF5812GR1_MICROSEMI
- material
- N/A
0,00 zł
Opis / MRF5812GR1
Trans RF BJT NPN 15V 0.2A 1250mW 8-Pin SOIC T/R
Informacje podstawowe
- ProducentMicrosemi
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 5
- PCNs 36
- MaskPart MRF5812GR1%
Parametry
- Configuration Single Dual Base Dual Collector Quad Emitter
- Material N/A
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 30
- Maximum Collector Cut-Off Current (nA) 100000
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 15
- Maximum Collector-Emitter Voltage Range (V)
- Maximum DC Collector Current (A) 0.2
- Maximum DC Collector Current Range (A) 0.12 to 0.5
- Maximum Emitter Base Voltage (V) 2.5
- Maximum Emitter Cut-Off Current (nA) 100000
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) 3
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 1250
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) N/A
- Maximum Transition Frequency (MHz) 5000(Typ)
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 50@50mA@5V
- Minimum DC Current Gain Range 50 to 120
- Minimum Storage Temperature (°C) N/A
- Number of Elements per Chip 1
- Operational Bias Conditions 10V/50mA
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Type NPN
- Typical Collector Efficiency (%) N/A
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) 1.4
- Typical Power Gain (dB) 20
Więcej informacji
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 15V 0.2A 1250mW 8-Pin SOIC T/R |