MRF5711MLT1

ProducentMicrosemiEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF5711MLT1_MICROSEMI
material
Si
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Opis / MRF5711MLT1

Trans RF BJT NPN 10V 0.08A 333mW 4-Pin SOT-143

Informacje podstawowe

  • ProducentMicrosemi
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 93
  • PCNs 34
  • GIDEP-Alerts 1
  • MaskPart MRF5711MLT1%
  • IntroductionDate Apr 05, 2001

Parametry

  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 20
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 10
  • Maximum Collector-Emitter Voltage Range (V)
  • Maximum DC Collector Current (A) 0.08
  • Maximum DC Collector Current Range (A) 0.06 to 0.12
  • Maximum Emitter Base Voltage (V) 2.5
  • Maximum Noise Figure (dB) 2.2(Typ)
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 333
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 50@30mA@5V
  • Minimum DC Current Gain Range 50 to 120
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/A
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Power Gain (dB) N/A

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Main description Trans RF BJT NPN 10V 0.08A 333mW 4-Pin SOT-143