MRF544

ProducentMicrosemiEURoHSYes (2011/65/EU)Automotive No.
SKU
MRF544_MICROSEMI
material
Si
0,00 zł

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Opis / MRF544

Trans RF BJT NPN 70V 0.4A 3500mW 3-Pin TO-39

Informacje podstawowe

  • ProducentMicrosemi
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 15
  • PCNs 38
  • MaskPart MRF544%
  • IntroductionDate Oct 25, 1999

Parametry

  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 100
  • Maximum Collector Cut-Off Current (nA) 20000
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 70
  • Maximum Collector-Emitter Voltage Range (V) 70 to 100
  • Maximum DC Collector Current (A) 0.4
  • Maximum DC Collector Current Range (A) 0.12 to 0.5
  • Maximum Emitter Base Voltage (V) 3
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 3500
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) N/A
  • Maximum Transition Frequency (MHz) 1500(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 15@50mA@6V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) N/A
  • Minimum Storage Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Operational Bias Conditions 25V/50mA
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Tradename N/A
  • Type NPN
  • Typical Collector Efficiency (%) N/A
  • Typical Input Capacitance (pF) 6.1
  • Typical Output Capacitance (pF) 2.5
  • Typical Power Gain (dB) 13.5

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Main description Trans RF BJT NPN 70V 0.4A 3500mW 3-Pin TO-39