MRF4427R1

ProducentMicrosemiEURoHSNo (2011/65/EU, 2015/863)Automotive No.
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SKU
MRF4427R1_MICROSEMI
material
N/A
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Opis / MRF4427R1

Trans RF BJT NPN 20V 0.4A 8-Pin SO T/R

Informacje podstawowe

  • ProducentMicrosemi
  • EURoHSNo (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 6
  • PCNs 36
  • MaskPart MRF4427%
  • IntroductionDate Oct 25, 1999

Parametry

  • Configuration Single Dual Base Dual Collector Quad Emitter
  • Material N/A
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 40
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) 0.06(Typ)@20mA@100mA
  • Maximum Collector-Emitter Voltage (V) 20
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) 0.4
  • Maximum DC Collector Current Range (A) 0.12 to 0.5
  • Maximum Emitter Base Voltage (V) 2
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance 125°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 1500
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) 1300(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 10@100mA@5V|5@360mA@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions 12V/50mA
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Tradename N/A
  • Type NPN
  • Typical Collector Efficiency (%) N/A
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) 3.4(Max)
  • Typical Power Gain (dB) 20

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Main description Trans RF BJT NPN 20V 0.4A 8-Pin SO T/R