MRF422

ProducentMACOMEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
MRF422_MACOM
material
Si
0,00 zł

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Opis / MRF422

Trans RF BJT NPN 40V 20A 4-Pin Case 211-11

Informacje podstawowe

  • ProducentMACOM
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 8
  • Inventory 4
  • PCNs 11
  • MaskPart MRF422%
  • IntroductionDate May 06, 2009
  • EnablingEnergyEfficiency No

Parametry

  • Configuration Single Dual Emitter
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 85
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 40
  • Maximum Collector-Emitter Voltage Range (V) 40 to 50
  • Maximum DC Collector Current (A) 20
  • Maximum DC Collector Current Range (A) 8 to 100
  • Maximum Emitter Base Voltage (V) 3
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance 0.6°C/W
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 290000
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 15@5A@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/A
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) 420
  • Typical Power Gain (dB) 13

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Main description Trans RF BJT NPN 40V 20A 4-Pin Case 211-11