MRF2628

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF2628_NXP_SEMICONDUCTORS
material
Si
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Opis / MRF2628

Trans RF BJT NPN 18V 2.5A 40000mW 4-Pin Case 244-04

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • PCNs 14
  • MaskPart MRF2628%
  • IntroductionDate Jul 16, 2002

Parametry

  • Configuration Single Dual Emitter
  • Material Si
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 36
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 18
  • Maximum Collector-Emitter Voltage Range (V)
  • Maximum DC Collector Current (A) 2.5
  • Maximum DC Collector Current Range (A) 2 to 8
  • Maximum Emitter Base Voltage (V) 4
  • Maximum Operating Temperature (°C) 200
  • Maximum Power Dissipation (mW) 40000
  • Maximum Transition Frequency (MHz) N/A
  • Minimum DC Current Gain 10@0.5A@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Output Power (W) 15
  • Supplier Temperature Grade N/A
  • Type NPN

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Main description Trans RF BJT NPN 18V 2.5A 40000mW 4-Pin Case 244-04