MRF20030R

ProducentNXP SemiconductorsAutomotive No.
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MRF20030R_NXP_SEMICONDUCTORS
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Opis / MRF20030R

Trans RF BJT NPN 25V 4A

Informacje podstawowe

  • ProducentNXP Semiconductors
  • Automotive No

Informacje dodatkowe

  • Crosses 7
  • PCNs 14
  • MaskPart MRF20030R%

Parametry

  • Configuration Single
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 60
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 25
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) 4
  • Maximum DC Collector Current Range (A) 2 to 8
  • Maximum Emitter Base Voltage (V) 3
  • Maximum Operating Temperature (°C) 200
  • Maximum Power Dissipation (mW) 125000
  • Maximum Transition Frequency (MHz) N/A
  • Minimum DC Current Gain 20@1A@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) -65
  • Number of Elements per Chip 1
  • Output Power (W) 30
  • Supplier Temperature Grade N/A
  • Type NPN

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Main description Trans RF BJT NPN 25V 4A