MRF1047T1

ProducentNXP SemiconductorsEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF1047T1_NXP_SEMICONDUCTORS
material
Si
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Opis / MRF1047T1

Trans RF BJT NPN 5V 0.045A 3-Pin Case 419-02 T/R

Informacje podstawowe

  • ProducentNXP Semiconductors
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 14
  • PCNs 14
  • MaskPart MRF1047%
  • IntroductionDate Sep 08, 2004

Parametry

  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) 22(Typ)
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 12
  • Maximum Collector Cut-Off Current (nA) 200
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 5
  • Maximum Collector-Emitter Voltage Range (V)
  • Maximum DC Collector Current (A) 0.045
  • Maximum DC Collector Current Range (A) 0.001 to 0.06
  • Maximum Emitter Base Voltage (V) 2.5
  • Maximum Emitter Cut-Off Current (nA) 100
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance 435°C/W
  • Maximum Noise Figure (dB) 1.2(Min)
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) 0.5(Typ)
  • Maximum Power Dissipation (mW) 172
  • Maximum Rise Time (ns) N/A
  • Maximum Transition Frequency (MHz) 12000(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 100@3mA@3V
  • Minimum DC Current Gain Range 50 to 120
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operational Bias Conditions 3V/3mA
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) 0.4
  • Typical Power Gain (dB) 13

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Main description Trans RF BJT NPN 5V 0.045A 3-Pin Case 419-02 T/R