MRF10120

ProducentMACOMEURoHSYes (2011/65/EU, 2015/863)Automotive No.
Powiadom mnie gdy produkt będzie dostępny
SKU
MRF10120_MACOM
material
Si
0,00 zł

Zapytaj o ten produkt

Opis / MRF10120

Trans RF BJT NPN 55V 15A 3-Pin Case 355C-02

Informacje podstawowe

  • ProducentMACOM
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 33
  • Inventory 4
  • PCNs 10
  • MaskPart MRF10120%
  • IntroductionDate May 04, 2009
  • EnablingEnergyEfficiency No

Parametry

  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 55
  • Maximum Collector Cut-Off Current (nA) 25000000
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 55
  • Maximum Collector-Emitter Voltage Range (V) 50 to 60
  • Maximum DC Collector Current (A) 15
  • Maximum DC Collector Current Range (A) 8 to 100
  • Maximum Emitter Base Voltage (V) 3.5
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance 0.46°C/W
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 200
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) 380000
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 200
  • Maximum Transition Frequency (MHz) N/A
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 20@5A@5V
  • Minimum DC Current Gain Range 2 to 30
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/A
  • Output Power (W) 120
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) N/A
  • Typical Power Gain (dB) 8.5

Więcej informacji

Do pobrania Download
Main description Trans RF BJT NPN 55V 15A 3-Pin Case 355C-02