MRF1001A

ProducentNew Jersey Semi-ConductorEURoHSUnknown (2002/95/EC)Automotive No.
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SKU
MRF1001A_NEW_JERSEY_SEMI-CONDUCTOR
material
N/A
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Opis / MRF1001A

Trans RF BJT 20V

Informacje podstawowe

  • ProducentNew Jersey Semi-Conductor
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • MaskPart MRF1001A%
  • IntroductionDate Aug 07, 2014

Parametry

  • Configuration Single
  • Material N/A
  • Maximum 3rd Order Intercept Point (dBm) N/A
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 30
  • Maximum Collector Cut-Off Current (nA) 50000(Typ)
  • Maximum Collector-Emitter Saturation Voltage (V) 0.1(Typ)@10mA@50mA
  • Maximum Collector-Emitter Voltage (V) 20
  • Maximum Collector-Emitter Voltage Range (V) 20 to 30
  • Maximum DC Collector Current (A) N/A
  • Maximum DC Collector Current Range (A) N/A
  • Maximum Emitter Base Voltage (V) 3.5
  • Maximum Emitter Cut-Off Current (nA) N/A
  • Maximum Junction Ambient Thermal Resistance N/A
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power 1dB Compression (dBm) N/A
  • Maximum Power Dissipation (mW) N/A
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) N/A
  • Maximum Transition Frequency (MHz) 3000(Typ)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 50@50mA@5V
  • Minimum DC Current Gain Range 50 to 120
  • Minimum Operating Temperature (°C) N/A
  • Minimum Storage Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Operational Bias Conditions 14V/90mA
  • Output Power (W) N/A
  • Supplier Temperature Grade N/A
  • Tradename N/A
  • Type N/A
  • Typical Collector Efficiency (%) N/A
  • Typical Input Capacitance (pF) N/A
  • Typical Output Capacitance (pF) N/A
  • Typical Power Gain (dB) 11.7

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Main description Trans RF BJT 20V