MRD3055

Więcej informacji
Main description Phototransistor IR Chip Silicon
Phototransistor IR Chip Silicon

Informacje podstawowe

  • ProducentON Semiconductor
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • PCNs 17
  • MaskPart MRD3055%
  • IntroductionDate Aug 14, 2007
  • SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MRD3055&tabbed=Y&clearFilters=Y&searchType=others

Parametry

  • Cut-Off Filter Visible Cut-off
  • Fabrication Technology NPN Transistor
  • Half Intensity Angle Degrees (°) N/A
  • Lens Color N/A
  • Lens Dimensions (mm) 4.01
  • Lens Shape Type Domed
  • Material Silicon
  • Maximum Collector Current (mA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) N/A
  • Maximum Collector-Emitter Voltage (V) 30
  • Maximum Dark Current (nA) 100
  • Maximum Emitter-Collector Voltage (V) 5
  • Maximum Emitter-Collector Voltage Range (V) 3.3 to 9
  • Maximum Fall Time (ns) 3500(Typ)
  • Maximum Light Current (uA) 1500(Typ)
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) 250
  • Maximum Rise Time (ns) 2000(Typ)
  • Minimum Operating Temperature (°C) -55
  • Number of Channels per Chip 1
  • Peak Wavelength (nm) N/A
  • Phototransistor Type Phototransistor
  • Polarity NPN
  • Supplier Temperature Grade N/A
  • Type IR Chip
  • Viewing Orientation Top View
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