MJD47T4G

ProducentON SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
MJD47T4G_ON_SEMICONDUCTOR
material
Si
0,00 zł

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Opis / MJD47T4G

Trans GP BJT NPN 250V 1A 1560mW 3-Pin(2+Tab) DPAK T/R

Informacje podstawowe

  • ProducentON Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 7
  • Inventory 8
  • PCNs 28
  • GIDEP-Alerts 3
  • MaskPart MJD47%G
  • IntroductionDate Aug 31, 1995
  • SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MJD47T4G&tabbed=Y&clearFilters=Y&searchType=others

Parametry

  • Category Bipolar Power
  • Configuration Single
  • Material Si
  • Maximum 3rd Order Intercept Point (dBm) N/R
  • Maximum Base Emitter Saturation Voltage (V) N/A
  • Maximum Collector Base Voltage (V) 350
  • Maximum Collector Cut-Off Current (nA) N/A
  • Maximum Collector-Emitter Saturation Voltage (V) 1@0.2A@1A
  • Maximum Collector-Emitter Voltage (V) 250
  • Maximum DC Collector Current (A) 1
  • Maximum Delay Time (ns) N/A
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Fall Time (ns) N/A
  • Maximum Junction Ambient Thermal Resistance 80°C/W
  • Maximum Junction Case Thermal Resistance 8.33°C/W
  • Maximum Noise Figure (dB) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power 1dB Compression (dBm) N/R
  • Maximum Power Dissipation (mW) 1560
  • Maximum Rise Time (ns) N/A
  • Maximum Storage Temperature (°C) 150
  • Maximum Storage Time (ns) N/A
  • Maximum Transition Frequency (MHz) 10(Min)
  • Maximum Turn-Off Time (ns) N/A
  • Maximum Turn-On Time (ns) N/A
  • Minimum DC Current Gain 30@300mA@10V|10@1A@10V
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operational Bias Conditions N/R
  • Output Power (W) N/R
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Power Gain (dB) N/R

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Main description Trans GP BJT NPN 250V 1A 1560mW 3-Pin(2+Tab) DPAK T/R