MJD350T4G
ProducentON SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
- SKU
- MJD350T4G_ON_SEMICONDUCTOR
- material
- Si
0,00 zł
Opis / MJD350T4G
Trans GP BJT PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 19
- Inventory 8
- PCNs 31
- GIDEP-Alerts 2
- MaskPart MJD350%G
- IntroductionDate Aug 31, 1995
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MJD350T4G&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Bipolar Power
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 300
- Maximum Collector Cut-Off Current (nA) N/A
- Maximum Collector-Emitter Saturation Voltage (V) 1@10mA@100mA
- Maximum Collector-Emitter Voltage (V) 300
- Maximum DC Collector Current (A) 0.5
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 3
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance 80°C/W
- Maximum Junction Case Thermal Resistance 8.33°C/W
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 1560
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 30@50mA@10V
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type PNP
- Typical Power Gain (dB) N/R
Więcej informacji
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|---|---|
| Main description | Trans GP BJT PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK T/R |