MJD122T4

ProducentSTMicroelectronicsEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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MJD122T4_STMICROELECTRONICS
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Opis / MJD122T4

Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) TO-252 T/R

Informacje podstawowe

  • ProducentSTMicroelectronics
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 24
  • Inventory 5
  • PCNs 21
  • MaskPart MJD122%
  • IntroductionDate Sep 02, 2002

Parametry

  • Configuration Single
  • Maximum Base Emitter Saturation Voltage (V) 4.5@80mA@8A
  • Maximum Collector Base Voltage (V) 100
  • Maximum Collector Cut-Off Current (uA) 10
  • Maximum Collector-Emitter Saturation Voltage (V) 2@16mA@4A|4@80mA@8A
  • Maximum Collector-Emitter Voltage (V) 100
  • Maximum Continuous DC Collector Current (A) 8
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Input Current (mA) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 20000
  • Minimum DC Current Gain 1000@4A@4V|100@8A@4V
  • Minimum Operating Temperature (°C) -65
  • Number of Elements per Chip 1
  • Supplier Temperature Grade N/A
  • Type NPN
  • Typical Current Gain Bandwidth (MHz) N/A

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Main description Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) TO-252 T/R