MJD122G

ProducentON SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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MJD122G_ON_SEMICONDUCTOR
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Opis / MJD122G

Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube

Informacje podstawowe

  • ProducentON Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 10
  • Inventory 9
  • PCNs 27
  • GIDEP-Alerts 1
  • MaskPart MJD122G%
  • IntroductionDate Aug 31, 1995
  • SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=MJD122G&tabbed=Y&clearFilters=Y&searchType=others

Parametry

  • Configuration Single
  • Maximum Base Emitter Saturation Voltage (V) 4.5@80mA@8A
  • Maximum Collector Base Voltage (V) 100
  • Maximum Collector Cut-Off Current (uA) 10
  • Maximum Collector-Emitter Saturation Voltage (V) 2@16mA@4A|4@80mA@8A
  • Maximum Collector-Emitter Voltage (V) 100
  • Maximum Continuous DC Collector Current (A) 8
  • Maximum Emitter Base Voltage (V) 5
  • Maximum Input Current (mA) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 1750
  • Maximum Storage Temperature (°C) 150
  • Minimum DC Current Gain 1000@4A@4V|100@8A@4V
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Supplier Temperature Grade Automotive
  • Type NPN
  • Typical Current Gain Bandwidth (MHz) 4(Min)

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Main description Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube